FFPF60SA60DS
—
STEALTH
TM
Dual Series Diode
www.fairchildsemi.com
2
?2004 Fairchild Semiconductor Corporation
FFPF60SA60DS Rev. C1
Electrical Characteristics TC = 25oC
unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
VF1
Forward Voltage
I
F
= 8 A
I
F
= 8 A
TC = 25oC
TC = 125oC
-
-
2.0
1.6
2.4
2.0
V
IR1
Reverse Current
@rated V
R
TC = 25oC
TC = 125oC
-
-
-
-
100
1000
?A
trr
Maximum Reverse Recovery Time
(IF
= 1 A, di
F/dt = 100 A/?s, VR
= 30 V)
-
-
25
ns
trr
Maximum Reverse Recovery Time
(IF
= 8 A, di
F/dt = 100 A/?s, VR
= 30 V)
-
-
30
ns
trr
Irr
Qrr
Reverse Recovery Time
Reverse Recovery Current Reverse
Recovery Charge
(IF
= 8 A, di
F/dt = 200 A/?s, VR
= 390 V)
-
-
-
39
2
39
-
-
-
ns
A
nC
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300?s, Duty Cycle = 2%
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